inchange semiconductor isc product specification isc silicon pnp darlington power transistor MJ900 description collector-emitter breakdown voltage- : v (br)ceo =-60v(min.) high dc current gain- : h fe = 1000(min.)@i c =-3a low collector saturation voltage- : v ce (sat) =-2.0v(max.)@ i c =-3a applications designed for use as output dev ices in complementary general purpose amplifier applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current-continunous -8 a i b b base current-continunous -0.1 a p c collector power dissipation @t c =25 90 w t j junction temperature 200 t stg storage temperature range -55~+200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.94 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor MJ900 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-0.1a; i b = 0 -60 v v ce (sat)-1 collector-emitter saturation voltage i c =-3a; i b =-12ma -2.0 v v ce (sat)-2 collector-emitter saturation voltage i c =-8a; i b =-40ma -4.0 v v be (on) base-emitter on voltage i c =-3a, v ce =-3v -2.5 v i cer collector cutoff current v ce =-60v; r be =1k v ce =-60v; r be =1k ; t c =150 -1.0 -5.0 ma i ceo collector cutoff current v ce =-30v; i b = 0 -0.5 ma i ebo emitter cutoff current v eb =-5v; i c = 0 -2.0 ma h fe-1 dc current gain i c =-3a, v ce =-3v 1000 h fe-2 dc current gain i c =-4a, v ce =- 3v 750 isc website www.iscsemi.cn
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